DISCRETE SEMICONDUCTORSDATA SHEETfpageM3D1191N5817; 1N5818; 1N5819Schottky barrier diodesProduct speci?cation
Supersedes data of April 1992
1996May03
Philips SemiconductorsProduct speci?cation
Schottky barrier diodes
1N5817; 1N5818; 1N5819
FEATURES
?Low switching losses?Fast recovery time?Guard ring protected
?Hermetically sealed leaded glasspackage.APPLICATIONS
?Low power, switched-mode powersupplies?Rectifying?Polarity protection.
1996May03DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planartechnology, and encapsulated in SOD81 hermetically sealed glass packagesincorporating ImplotecTM(1) technology.
(1)Implotec is a trademark of Philips.
handbook, 4 columnskaMAM218Fig.1 Simplified outline (SOD81) and symbol.2
Philips SemiconductorsProduct speci?cation
Schottky barrier diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC134).SYMBOLVR1N58171N58181N5819VRSMnon-repetitive peak reverse voltage1N58171N58181N5819VRRMrepetitive peak reverse voltage1N58171N58181N5819VRWMcrest working reverse voltage1N58171N58181N5819IF(AV)IFSMaverage forward currentnon-repetitive peak forward currentPARAMETERcontinuous reverse voltage1N5817; 1N5818; 1N5819
CONDITIONS????????????Tamb=55°C; Rthj-a=100K/W;note1; VR(equiv)=0.2V; note2t=8.3ms half sinewave;JEDEC method;Tj=Tjmaxpriortosurge:VR=0??MIN.MAX.203040243648203040203040125VVVVVVVVVVVVAAUNITTstgTjNotes
storage temperaturejunction temperature?65?+175125°C°C1.Refer to SOD81 standard mounting conditions.
2.For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power lossesPR and IF(AV) rating will be available on request.
1996May033
Philips SemiconductorsProduct speci?cation
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
Tamb=25°C; unless otherwise speci?ed.SYMBOLVFPARAMETERforward voltage1N5817seeFig.2IF=0.1AIF=1AIF=3AVFforward voltage1N5818seeFig.2IF=0.1AIF=1AIF=3AVFforward voltage1N5819seeFig.2IF=0.1AIF=1AIF=3AIRCdreverse currentdiode capacitance1N58171N58181N5819Note
1.Pulsed test: tp=300μs;δ=0.02.THERMAL CHARACTERISTICSSYMBOLRthj-aNote
1.Refer to SOD81 standard mounting conditions.
PARAMETERthermal resistance from junction to ambientVR=VRRMmax; note1VR=VRRMmax; Tj=100°CVR=4V; f=1MHzCONDITIONS1N5817; 1N5818; 1N5819
MIN.?????????????????????????TYP.MAX.320450750330550875340600900110???UNITmVmVmVmVmVmVmVmVmVmAmApFpFpF805050CONDITIONSnote1VALUE100UNITK/W1996May034
Philips SemiconductorsProduct speci?cation
Schottky barrier diodes
GRAPHICAL DATA
1N5817; 1N5818; 1N5819
handbook, halfpage5MBE634IF(A)4Tj = 125 oC25 oC321000.5VF (V)1Fig.2 Typical forward voltage.1a = 3PF(AV)(W)2.521.571.421MBE6420.5000.511.5IF(AV) (A)2Fig.31N817. Maximum values steady state forward power dissipation as a function of the average forwardcurrent; a=IF(RMS)/IF(AV).5
1996May03
1N5817（二极管）
