MANUFACTURE OF SEMICONDUCTOR
申请(专利)号： JP19890195377
专利号： JPH02168631A 主分类号： H01L21/302
申请权利人： TEXAS INSTR INC
摘 要：
PURPOSE: To allow the surfaces of first and second semiconductor layers to be one surface by forming the layer of a second semiconductor onto a substrate provided with a recessed part at a place where a first semiconductor is not
masked, removing this layer excepting for the neighborhood of the recessed part and ultrasonic-cleaning it integrally with the mask so as to remove the residual part of the layer of a second
semiconductor layer which is not positioned within the recessed part.
CONSTITUTION: GaAs layers are grown on the surface of a substrate 102 covered with an oxide 108 and on a surface within the recessed part of the substrate 102 which is not covered with an oxide. Photoresist 112 applied onto the GaAs layers 104 and 106 is made a pattern to cover the recessed part provided with an overlapped part on the oxide 108. The GaAs layers 104 and 106 are etched by
申请日： 1989-07-27 公开公告日： 1990-06-28
分类号： H01L21/302;
H01L21/20; H01L21/31; H01L21/338; H01L29/812 发明设计人： HISASHI
SHICHIJIYOU 申请国代码： JP
优先权： 19880727 US
22496588
摘 要 附 图：
using this photoresist 112. The oxide 108 is etched by BELL 2 (solution of HF+NH4 F). The GaAs layers 104 and 106 are crushed at a thin neck part 114 by this etching. The crushed pieces are
ultrasonic-cleaned to remove GaAs 106 supported by the part 114 in cantilever. Thus a planarized surface is formed. 主权项：
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MANUFACTURE OF SEMICONDUCTOR
