Effect of Nano-SiC and Nano-Si Doping on Critical
Current Density of MgB2
佚名
【期刊名称】《清华大学学报（英文版）》 【年(卷),期】2003(008)003
【摘要】The discovery of superconductivity in magnesium diboride (MgB2) has opened up a new field in materials science research. It offers a possibility of a new class of high performance superconducting materials for practical applications becauseigher Tc (Tc=39 K) compared with Nb3Sn and Nb-Ti alloys (two or four times that of Nb3Sn and Nb-Ti alloys). However, the weak flux pinning in the magneticfield remains a major challenge. This paper reports the most interesting results on nanomaterial (SiC and Si) doping in magnesium diboride. The high densityof nano-scale defects introduced by doping is responsible for the enhanced pinning. The fabrication method, critical current density, microstructures, flux pinning and cost for magnesium diboride bulks, wires and tapes are also discussed. It is believed that high performance SiC doped MgB2 will have a great potential for many practical applications at 5 K to 25 K up to 5 T. 【总页数】9页(307-315)
【关键词】magnesium diboride (MgB2);MgB2/Fe wires doped with nano-SiC;MgB2/Fewires doped with nano-Si;critical current density;flux
Effect of Nano-SiC and Nano-Si Doping on Critical Current Density of MgB2
